Leakage inductance calculation and simulation research of extra-high voltage magnetically controlled shunt reactor

Yanping Liang, Z. Fang, Hai-ting Zhang, An Zhen
{"title":"Leakage inductance calculation and simulation research of extra-high voltage magnetically controlled shunt reactor","authors":"Yanping Liang, Z. Fang, Hai-ting Zhang, An Zhen","doi":"10.1109/MACE.2010.5535891","DOIUrl":null,"url":null,"abstract":"Because of the relatively high charging capacitance of Ultra High Voltage transmission lines, the contradiction between UHV transmission line's over-voltage limitation strategy and its reactive power compensation strategy becomes prominent, while fix controllable reactors on UHV line's can solve this contradiction. After the magnetic circuit structure and working principles of 500kV magnetically controlled shunt reactor (MCSR) are analyzed, and the simulation model of MCSR is established by the magnetic circuit decomposition approach in Matlab/Simulink in this paper. From the point of leakage inductance of each winding in MCSR, the energy method was used to calculation the leakage inductance by the 3D finite element method (FEM) model. The result indicated that the magnetic flux leakage of each winding is increased by the increase of the saturation, while the leakage inductance of each winding is decreased by the increase of the saturation, and finally stabilized at a regular value. Simulation results reflect the actual operating conditions of MCSR, the model and algorithm provides necessary simulation means for UHV and EHV MCSR analysis.","PeriodicalId":6349,"journal":{"name":"2010 International Conference on Mechanic Automation and Control Engineering","volume":"16 1","pages":"4025-4028"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Mechanic Automation and Control Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MACE.2010.5535891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

Because of the relatively high charging capacitance of Ultra High Voltage transmission lines, the contradiction between UHV transmission line's over-voltage limitation strategy and its reactive power compensation strategy becomes prominent, while fix controllable reactors on UHV line's can solve this contradiction. After the magnetic circuit structure and working principles of 500kV magnetically controlled shunt reactor (MCSR) are analyzed, and the simulation model of MCSR is established by the magnetic circuit decomposition approach in Matlab/Simulink in this paper. From the point of leakage inductance of each winding in MCSR, the energy method was used to calculation the leakage inductance by the 3D finite element method (FEM) model. The result indicated that the magnetic flux leakage of each winding is increased by the increase of the saturation, while the leakage inductance of each winding is decreased by the increase of the saturation, and finally stabilized at a regular value. Simulation results reflect the actual operating conditions of MCSR, the model and algorithm provides necessary simulation means for UHV and EHV MCSR analysis.
特高压磁控并联电抗器漏感计算与仿真研究
由于特高压输电线路具有较高的充电电容,使得特高压输电线路的过电压限制策略与无功补偿策略之间的矛盾变得突出,而在特高压输电线路上安装可控电抗器可以解决这一矛盾。本文分析了500kV磁控并联电抗器(MCSR)的磁路结构和工作原理,并在Matlab/Simulink中采用磁路分解的方法建立了MCSR的仿真模型。从MCSR各绕组的漏感角度出发,利用能量法建立三维有限元模型,计算出MCSR各绕组的漏感。结果表明,随着饱和的增加,各绕组的漏磁增大,而各绕组的漏磁电感则随着饱和的增加而减小,并最终稳定在一个规则值上。仿真结果反映了MCSR的实际运行情况,该模型和算法为特高压和超高压MCSR分析提供了必要的仿真手段。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信