An Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device with Large Vt Memory Window $( > 10\mathrm{V})$ and Excellent 100K Endurance

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265078

P. Du, H. Lue, T. Yeh, T. Hsu, Wei-Chen Chen, Chiatze Huang, Guan-Ru Lee, Min-Feng Hung, C. Chiu, Keh-Chung Wang, Chih-Yuan Lu

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引用次数: 1

Abstract

We report an extremely scaled HC 3D NAND device with large memory window in this paper. The proposed cell area $(0.009\mu \mathrm{m}^{2}/\mathrm{layer})$ is only ~ 32% of the standard GAA 3D NAND cell area, while it can produce very large $gt; 10\mathrm{V}$ Vt memory window with excellent 100K endurance. We also study the size effect of HC device. It is found that the larger (taller) HC device may easily suffer parasitic edge leakage effect that causes programming saturation issue. A “wake-up” effect by an initial strong -FN erasing can introduce gate injected electrons that electrically suppress the parasitic edge and in turn “wake-up” the device to produce larger programming window. On the other hand, the smaller HC device already shows excellent memory window without the need of wake-up. Good post-cycled retention and RTN performance are demonstrated for an extremely scaled, “hero” HC device. Our results suggest a promising path of 3D NAND device to enjoy both aggressive dimension scaling and large memory window.

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具有大Vt存储窗口$(> 10\ mathm {V})$和出色的100K续航力的超大尺寸半圆柱形(HC) 3D NAND器件

本文报道了一种具有大存储窗口的超大尺寸HC 3D NAND器件。提出的单元面积$(0.009\mu \mathrm{m}^{2}/\mathrm{layer})$仅为标准GAA 3D NAND单元面积的~ 32%，而它可以产生非常大的$gt;10\ mathm {V}$ Vt内存窗口，具有出色的100K续航能力。我们还研究了HC装置的尺寸效应。研究发现，较大(较高)的HC器件容易产生寄生边漏效应，从而导致编程饱和问题。通过初始强fn擦除产生的“唤醒”效应可以引入栅极注入电子，这些电子在电上抑制寄生边缘，并反过来“唤醒”器件以产生更大的编程窗口。另一方面，较小的HC设备无需唤醒即可显示出色的内存窗口。良好的后循环保留和RTN性能证明了一个极端规模，“英雄”HC设备。我们的研究结果表明，3D NAND器件具有积极的尺寸缩放和大内存窗口的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 IEEE Symposium on VLSI Technology

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