Intermetallic Compounds For Interconnect Metal Beyond 3 nm Node

J. Koike, Toshihito Kuge, Linghan Chen, M. Yahagi
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引用次数: 1

Abstract

We report the recent results of NiAl and CuAl2 intermetallic compounds for advanced-node interconnect materials in place of Cu. Reported results of Co and Ru are briefly reviewed for comparison. CuAl2 can be a good choice in terms of liner-free and barrier-free interconnections having a low resistivity and a good TDDB and EM reliability.
用于3nm以上节点互连金属的金属间化合物
我们报道了NiAl和CuAl2金属间化合物代替Cu用于先进节点互连材料的最新研究结果。简要回顾了钴和钌的报道结果,以便进行比较。CuAl2具有低电阻率和良好的TDDB和EM可靠性,是无线和无障碍互连的良好选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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