Statistical distribution of RTS amplitudes in 20nm SOI FinFETs

Abstract

This abstract presents a comprehensive 3D simulation study on the impact of a single interface trapped charge in emerging 20nm gate-length FinFETs on an SOI substrate. The impact of the location of trapped charges on the Random Telegraph Signal (RTS) amplitudes is studied in detail. The RTS amplitude associated with particular trap position depends on the complex current density distribution in the Fin and is modified by `native' statistical variability sources such as metal gate granularity (MGG), line edge roughness (LER), and random discrete dopants (RDD).