Investigation of microwave power generation of pulse double-drift Si IMPATT diodes operating in short part of millimeter wave lengths

Abstract

This article presents the results of studies experimental samples of silicon drift impact ionization avalanche transit-time (IMPATT) diodes and generators on its basis. On silicic double-drift region IMPATT diode with round quartz pillar it was obtained microwave generation with frequency of 227 GHz and launch power 16,6 mW with the pulse duration of 80 ns. Also, there are parameters of IMPATT oscillator, structural decisions used for the concordance of impedance of IMPATT diode with microwave cell and charts of measuring tract.