Obtaining Thin Films of ZnO Through Thermal Evaporation in Vacuum and Oxidation

S. Boiciuc
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引用次数: 0

Abstract

The paper presents the obtaining of thin films out of ZnO by thermal evaporation and oxidation, in a conventional furnace, at various temperatures between 350-550 oC of films from pure Zn deposited. The influence of current intensity, deposition  time and oxidation temperature on film structure and transparency was monitored.
真空热蒸发氧化法制备ZnO薄膜
本文介绍了在常规炉中,在350 ~ 550℃的不同温度下,用热蒸发氧化法制备ZnO薄膜的方法。考察了电流强度、沉积时间和氧化温度对薄膜结构和透明度的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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25
审稿时长
8 weeks
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