On the statistical trap-response (STR) method for characterizing random trap occupancy and NBTI fluctuation

Abstract

In nanoscale devices with only a few oxide traps, characterization of trap response during NBTI stress is challenging due to the stochastic nature of trapping/detrapping behavior. This paper successfully extends the statistical trap-response (STR) method from DC to AC device operation, for getting a full understanding of the trap occupancy probability and the aging-induced dynamic variations under DC and AC NBTI. The AC trap response and the AC NBTI fluctuations are found largely deviating from the DC case, indicating different physical mechanisms.