Design and fabrication of passive components using TF-IPD technology

Tsaitzu Lee, Yo-Shen Lin, Chiajiun Chen
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引用次数: 4

Abstract

In this paper, we develop a low-cost manufacturing technology for RF system-in-package applications. This high-performance process technology for integrated passive devices is achieved by electroplated formed thick Cu metal trace and back-side substrate thinning process on 8-inch glass wafer. This paper first presents investigations for common integration of inductors, resistors, capacitors in this thin film process technology and examines their RF performance. Then, a lowpass filter design for 2.4 GHz ISM band application is also demonstrated. Good RF performance as well as small form factor are achieved.
利用TF-IPD技术设计和制造无源元件
在本文中,我们开发了一种低成本的射频系统封装制造技术。这种集成无源器件的高性能工艺技术是通过在8英寸玻璃晶圆上电镀形成的厚铜金属痕迹和背面衬底减薄工艺实现的。本文首先对该薄膜工艺中常见的电感、电阻、电容集成进行了研究,并对其射频性能进行了测试。然后,给出了一种适用于2.4 GHz ISM频段的低通滤波器设计。实现了良好的射频性能和小的外形尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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