Bumpless Build Cube (BBCube): High-Parallelism, High-Heat-Dissipation and Low-Power Stacked Memory Using Wafer-Level 3D Integration Process

N. Chujo, K. Sakui, H. Ryoson, S. Sugatani, Tomoji Nakamura, T. Ohba
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引用次数: 5

Abstract

The superior electrical performance of 3D integration (3DI) with bumpless wafer-on-wafer (WOW) was clarified by 3D electromagnetic (EM) field analysis. We propose a high parallelism stacked memory, named “BBCube”, using WOW. In comparison with conventional high-bandwidth memory (HBM), BBCube can achieve a bandwidth four-times higher, at 1.4 TB/s, with only 13 % of the I/O power consumption, at 0.29 W. Furthermore, it should have sufficient potential to realize 32-times higher bandwidth and four-times more stacking levels.
无碰撞构建立方体(BBCube):采用晶圆级3D集成工艺的高并行、高散热和低功耗堆叠存储器
通过三维电磁场分析,阐明了无凹凸片对片(WOW)三维集成(3DI)材料优越的电学性能。我们提出了一个高并行的堆叠存储器,命名为“BBCube”,使用WOW。与传统的高带宽内存(HBM)相比,BBCube可以实现1.4 TB/s的四倍带宽,而I/O功耗仅为0.29 W,是传统高带宽内存的13%。此外,它应该有足够的潜力实现32倍的带宽和4倍的堆叠级别。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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