N. Chujo, K. Sakui, H. Ryoson, S. Sugatani, Tomoji Nakamura, T. Ohba
{"title":"Bumpless Build Cube (BBCube): High-Parallelism, High-Heat-Dissipation and Low-Power Stacked Memory Using Wafer-Level 3D Integration Process","authors":"N. Chujo, K. Sakui, H. Ryoson, S. Sugatani, Tomoji Nakamura, T. Ohba","doi":"10.1109/VLSITechnology18217.2020.9265038","DOIUrl":null,"url":null,"abstract":"The superior electrical performance of 3D integration (3DI) with bumpless wafer-on-wafer (WOW) was clarified by 3D electromagnetic (EM) field analysis. We propose a high parallelism stacked memory, named “BBCube”, using WOW. In comparison with conventional high-bandwidth memory (HBM), BBCube can achieve a bandwidth four-times higher, at 1.4 TB/s, with only 13 % of the I/O power consumption, at 0.29 W. Furthermore, it should have sufficient potential to realize 32-times higher bandwidth and four-times more stacking levels.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"3 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The superior electrical performance of 3D integration (3DI) with bumpless wafer-on-wafer (WOW) was clarified by 3D electromagnetic (EM) field analysis. We propose a high parallelism stacked memory, named “BBCube”, using WOW. In comparison with conventional high-bandwidth memory (HBM), BBCube can achieve a bandwidth four-times higher, at 1.4 TB/s, with only 13 % of the I/O power consumption, at 0.29 W. Furthermore, it should have sufficient potential to realize 32-times higher bandwidth and four-times more stacking levels.