Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation

A. Ghetti
{"title":"Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation","authors":"A. Ghetti","doi":"10.1109/SISPAD.2019.8870461","DOIUrl":null,"url":null,"abstract":"The self-force is a specific problem of self-consistent Monte Carlo-Poisson simulation resulting in an un-physical field component acting on a particle coming from the particle itself (the self-force). Several approaches have been proposed in literature to mitigate this problem, but all of them suffer to some extent of approximations and/or limitations. In this paper we propose a new and mathematically exact correction of the self-force problem based on a numerical approach. Although computationally expensive, it has no restriction and can be always applied. The new method has been tested on the difficult problem of plasma oscillation simulation providing the expected plasma energy from theory. Moreover, the same mathematical framework introduced here for the self-force correction can be readily applied also for the exact calculation of the reference force in the Particle-Particle-Particle-Mesh (P3M) method. The accuracy of such approach to P3M method is demonstrated by simulating the bulk low field mobility dependence on doping concentration.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870461","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The self-force is a specific problem of self-consistent Monte Carlo-Poisson simulation resulting in an un-physical field component acting on a particle coming from the particle itself (the self-force). Several approaches have been proposed in literature to mitigate this problem, but all of them suffer to some extent of approximations and/or limitations. In this paper we propose a new and mathematically exact correction of the self-force problem based on a numerical approach. Although computationally expensive, it has no restriction and can be always applied. The new method has been tested on the difficult problem of plasma oscillation simulation providing the expected plasma energy from theory. Moreover, the same mathematical framework introduced here for the self-force correction can be readily applied also for the exact calculation of the reference force in the Particle-Particle-Particle-Mesh (P3M) method. The accuracy of such approach to P3M method is demonstrated by simulating the bulk low field mobility dependence on doping concentration.
蒙特卡罗器件仿真中自力问题的精确修正
自作用力是自洽蒙特卡罗-泊松模拟的一个特殊问题,它导致一个非物理场分量作用于来自粒子本身的粒子(自作用力)。文献中提出了几种方法来缓解这个问题,但它们都有一定程度的近似值和/或局限性。本文提出了一种新的、数学上精确的基于数值方法的自力问题的修正方法。尽管计算成本很高,但它没有限制,并且总是可以应用。该方法已在等离子体振荡模拟难题上进行了验证,并从理论上提供了期望的等离子体能量。此外,本文引入的自力修正的数学框架也可以很容易地应用于粒子-粒子-粒子-网格(P3M)方法中参考力的精确计算。通过模拟掺杂浓度对块体低场迁移率的依赖性,证明了该方法对P3M方法的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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