Growth and characterization of Er doped ZnO prepared by reactive ion beam sputtering

Abstract

Er doped ZnO (EZO) has been deposited on Si substrate at 500°C by reactive ion beam sputtering utilizing a capillaritron ion source at various oxygen partial flow rates. All the EZO films exhibit a preferred (002) growth direction. Maximum Er emission at 984 nm (4I11/2 to 4I15/2) was achieved from EZO deposited with 12.5% oxygen partial flow rate. XPS analysis of the O 1s core level shows an additional peak centered at 532.5 eV, indicating the presence of erbium oxide.