1.25 volt, low cost, embedded flash memory for low density applications

Abstract

A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4 kbit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.