High-capacitance Cu/Ta2O5/Cu MIM structure for SoC applications featuring a single-mask add-on process

Abstract

This paper presents a metal-insulator-metal capacitor for SoC applications which has the highest capacitance density (up to 12 fF//spl mu/m/sup 2/) ever reported for a device in this field. The simple MIM structure allowed development of the process as a single-mask add-on to conventional Cu BEOL processing.