Conduction in silicon oxide films

M. Stuart
{"title":"Conduction in silicon oxide films","authors":"M. Stuart","doi":"10.1088/0508-3443/18/11/418","DOIUrl":null,"url":null,"abstract":"The current-voltage behaviour of evaporated silicon oxide films has been investigated. It is shown that conduction is bulk limited and closely obeys a modified Poole-Frenkel equation. This equation is derived from a model of the insulator containing donors and traps.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"2 1","pages":"1637-1640"},"PeriodicalIF":0.0000,"publicationDate":"1967-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/11/418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 39

Abstract

The current-voltage behaviour of evaporated silicon oxide films has been investigated. It is shown that conduction is bulk limited and closely obeys a modified Poole-Frenkel equation. This equation is derived from a model of the insulator containing donors and traps.
氧化硅薄膜中的导电
研究了蒸发氧化硅薄膜的电流-电压行为。结果表明,导电是体积受限的,并严格服从修正的Poole-Frenkel方程。这个方程是从包含供体和陷阱的绝缘体模型推导出来的。
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