{"title":"Fine Line and Low Stress RDL Solition for Fan-Out Wafer Level & Panel Level Packaging","authors":"Yoshinori Matsuura, T. Yoshida, Yukiko Komiya, Toshimi Nakamura, Takenori Yanai, Kazuhiro Okuyama, Yukiko Kitabatake, Rintaro Ishii, Katsuyuki Hayashi, Takashi Kubota, Joji Fujii","doi":"10.4071/1085-8024-2021.1.000039","DOIUrl":null,"url":null,"abstract":"\n Process limitations faced during the construction and integration of current and next generation advanced packages require a new RDL (Redistribution Layer) approach to overcome fine L/S and stress constraints. If interactions between design, process and materials are not optimized or controlled, then yield loss and higher cost result. RDL is an integral part of a package and with greater design complexity the number of such layers also increase.\n This paper introduces a new RDL concept through HRDP® (High Resolution Debondable Panel) technology. It has received industry wide attention, especially for Fan-Out, Chip Last, Wafer Level & Panel Level package assemblies. The structure and materials for HRDP® are described. The applicable HRDP® carrier can be provided in various dimensions and thicknesses for round panels and for square/rectangular panels with glass or silicon to match customer requirements. This accommodates process simplification and improves interfacial stresses. The process steps using HRDP® are elaborated, which essentially use existing tools in RDL metal patterning (i.e., Lithography, Developer/Descum etc.) without disrupting the assembly line layout and process flow.\n HRDP® is compatible with existing dielectrics and photoresists. It has been demonstrated that based upon the capabilities of dielectrics and photoresists used for RDL in the bump fab, fine L/S geometries of 2/2 um and less have been achieved. Reliability data has been shared.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"41 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4071/1085-8024-2021.1.000039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Process limitations faced during the construction and integration of current and next generation advanced packages require a new RDL (Redistribution Layer) approach to overcome fine L/S and stress constraints. If interactions between design, process and materials are not optimized or controlled, then yield loss and higher cost result. RDL is an integral part of a package and with greater design complexity the number of such layers also increase.
This paper introduces a new RDL concept through HRDP® (High Resolution Debondable Panel) technology. It has received industry wide attention, especially for Fan-Out, Chip Last, Wafer Level & Panel Level package assemblies. The structure and materials for HRDP® are described. The applicable HRDP® carrier can be provided in various dimensions and thicknesses for round panels and for square/rectangular panels with glass or silicon to match customer requirements. This accommodates process simplification and improves interfacial stresses. The process steps using HRDP® are elaborated, which essentially use existing tools in RDL metal patterning (i.e., Lithography, Developer/Descum etc.) without disrupting the assembly line layout and process flow.
HRDP® is compatible with existing dielectrics and photoresists. It has been demonstrated that based upon the capabilities of dielectrics and photoresists used for RDL in the bump fab, fine L/S geometries of 2/2 um and less have been achieved. Reliability data has been shared.