3D-TSV vertical interconnection method using Cu/SnAg double bumps and B-stage non-conductive adhesives (NCAs)

Yong-Won Choi, Jiwon Shin, K. Paik
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引用次数: 6

Abstract

In this study, the chip to chip eutectic solder bonding method using NCAs for TSV stacking was investigated as an alternative 3D-TSV interconnection method. The non-conductive polymer adhesive was applied at TSV wafers as a film format before eutectic solder bonding resulting in no extra underfill process. The electrical interconnections between micro-sized bumps for TSVs of the stacked chips were investigated. The electrical interconnection through the arrays of the bumps between two chips showed no change even after the reliability tests which meant that vertical interconnection by one step metal/polymer hybrid bonding was rapid as well as stable.
Cu/SnAg双凸点和b级非导电胶粘剂(NCAs) 3D-TSV垂直互连方法
在本研究中,研究了利用NCAs进行TSV堆叠的片对片共晶焊接方法,作为3D-TSV互连的替代方法。在共晶焊料粘合之前,将非导电聚合物粘合剂作为薄膜形式应用于TSV晶圆上,从而避免了额外的下填充过程。研究了堆叠芯片的tsv微凸点之间的电互连。即使经过可靠性测试,通过两个芯片之间凸起阵列的电互连也没有变化,这意味着一步金属/聚合物杂化键合的垂直互连既快速又稳定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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