Analysis and design of silicon bipolar distributed oscillators

A. Hajimiri, Hui Wu
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引用次数: 11

Abstract

A systematic approach to design of silicon bipolar distributed oscillators and voltage-controlled oscillators (VCOs) is presented. The operation of the distributed oscillators is analyzed and the general condition for oscillation is derived, resulting in analytical expressions for the frequency and amplitude of the distributed oscillators. Special attention is paid to transmission line modeling that largely determines the performance of the distributed oscillators. A distributed VCO operating at 12 GHz dissipating 13 mW of power is demonstrated. The VCO has a tuning range of 26% with a phase noise of -104 dBc/Hz at 1 MHz offset from the carrier. A second design shows a 17 GHz bipolar distributed oscillator, which dissipates 9 mW of power.
硅双极分布振荡器的分析与设计
提出了一种系统的硅双极分布振荡器和压控振荡器的设计方法。分析了分布振子的工作原理,推导了分布振子振荡的一般条件,得到了分布振子的频率和幅值的解析表达式。特别注意的是传输线的建模,这在很大程度上决定了分布式振荡器的性能。演示了一个工作在12ghz的分布式VCO,功耗为13mw。VCO的调谐范围为26%,在载波偏移1 MHz时相位噪声为-104 dBc/Hz。第二个设计显示了一个17 GHz双极分布式振荡器,它消耗了9兆瓦的功率。
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