R. Kopecek, F. Buchholz, V. Mihailetchi, J. Libal, J. Lossen, Ning Chen, H. Chu, C. Peter, Tudor Timofte, A. Halm, Yonggang Guo, X. Qu, Xiang Wu, Jiaqing Gao, Peng Dong
{"title":"Interdigitated Back Contact Technology as Final Evolution for Industrial Crystalline Single-Junction Silicon Solar Cell","authors":"R. Kopecek, F. Buchholz, V. Mihailetchi, J. Libal, J. Lossen, Ning Chen, H. Chu, C. Peter, Tudor Timofte, A. Halm, Yonggang Guo, X. Qu, Xiang Wu, Jiaqing Gao, Peng Dong","doi":"10.3390/solar3010001","DOIUrl":null,"url":null,"abstract":"We present our own Interdigitated Back Contact (IBC) technology, which was developed at ISC Konstanz and implemented in mass production with and at SPIC Solar in Xining, China, with production efficiencies of over 24%. To our knowledge, this is the highest efficiency achieved in the mass production of crystalline silicon solar cells without the use of charge-carrier-selective contacts. With an adapted screen-printing sequence, it is possible to achieve open-circuit voltages of over 700 mV. Advanced module technology has been developed for the IBC interconnection, which is ultimately simpler than for conventional double-sided contacted solar cells. In the next step, we will realize low-cost charge-carrier-selective contacts for both polarities in a simple sequence using processes developed and patented at ISC Konstanz. With the industrialisation of this process, it will be possible to achieve efficiencies well above 25% at low cost. We will show that with the replacement of silver screen-printed contacts by copper or aluminium metallisation, future IBC technology will be the end product for the PV market, as it is the best performing c-Si technology, leading to the lowest cost of electricity, even in utility-scale applications.","PeriodicalId":43869,"journal":{"name":"Solar-Terrestrial Physics","volume":null,"pages":null},"PeriodicalIF":0.9000,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar-Terrestrial Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/solar3010001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"GEOCHEMISTRY & GEOPHYSICS","Score":null,"Total":0}
引用次数: 2
Abstract
We present our own Interdigitated Back Contact (IBC) technology, which was developed at ISC Konstanz and implemented in mass production with and at SPIC Solar in Xining, China, with production efficiencies of over 24%. To our knowledge, this is the highest efficiency achieved in the mass production of crystalline silicon solar cells without the use of charge-carrier-selective contacts. With an adapted screen-printing sequence, it is possible to achieve open-circuit voltages of over 700 mV. Advanced module technology has been developed for the IBC interconnection, which is ultimately simpler than for conventional double-sided contacted solar cells. In the next step, we will realize low-cost charge-carrier-selective contacts for both polarities in a simple sequence using processes developed and patented at ISC Konstanz. With the industrialisation of this process, it will be possible to achieve efficiencies well above 25% at low cost. We will show that with the replacement of silver screen-printed contacts by copper or aluminium metallisation, future IBC technology will be the end product for the PV market, as it is the best performing c-Si technology, leading to the lowest cost of electricity, even in utility-scale applications.