A High-Bandwidth Fine-Pitch 2.57Tbps/mm In-package Communication Link Achieving 48fJ/bit/mm Efficiency

N. Pantano, G. van der Plas, P. Bex, P. Nolmans, D. Velenis, M. Verhelst, E. Beyne
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引用次数: 3

Abstract

Memory bandwidth is the main bottleneck to improve the performance of today's computing systems, and the demand for bandwidth is expected to grow exponentially in the coming years. The development of advanced packaging solutions making use of a silicon bridge such as Embedded Multi-Die Interconnect Bridge (EMIB) and Fan-Out Wafer Level Package (FO-WLP) are promising solutions to achieve high bandwidth density and to bring more memory closer to the computing units. This work demonstrates a 0.3V-swing 7mm long link over a silicon bridge, running at a bitrate of 9Gbps. It achieves 48fJ/bit/mm power efficiency on 3.5um pitch wires, resulting in a bandwidth density of 2.57Tbps/mm.
实现48fJ/bit/mm效率的高带宽细间距2.57Tbps/mm封装通信链路
内存带宽是提高当今计算系统性能的主要瓶颈,预计未来几年对带宽的需求将呈指数级增长。利用硅桥的先进封装解决方案的开发,如嵌入式多芯片互连桥(EMIB)和扇出晶圆级封装(FO-WLP),是实现高带宽密度和使更多内存更接近计算单元的有前途的解决方案。这项工作演示了在硅桥上以9Gbps的比特率运行的0.3 v摆动7mm长的链路。在3.5um间距线上实现48fJ/bit/mm的功率效率,带宽密度为2.57Tbps/mm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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