First demonstration of low temperature $(\leq 500^{\circ}\mathrm{C})$ CMOS devices featuring functional RO and SRAM bitcells toward 3D VLSI integration

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265092

C. Fenouillet-Béranger, L. Brunet, P. Batude, L. Brevard, X. Garros, T. M. Frutuoso, M. Cassé, J. Lugo, J. Lacord, D. Bosch, N. Bernard, A. Magalhaes-Lucas, M. Ribotta, B. Sklénard, F. Milési, R. Kies, G. Romano, P. Acosta-Alba, S. Kerdilès, A. Tavernier, C. Vizioz, P. Besson, R. Gassilloud, J. Kanyandekwe, D. Cooper, V. Lapras, W-H. Kim, Y. Sasaki, S. Oh, P. Kang, S.W. Lee, H. Na, J. Arcamone, F. Andrieu

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引用次数: 2

Abstract

For the first time FDSOI CMOS transistors with Si- monocrystalline channel have been fabricated at a temperature below 500°C. High performance PMOS $(\mathrm{Ion}=450\mu \mathrm{A}/\mu \mathrm{m}$ (V dd −0.9V) @ $\mathrm{Ioff}=-2\mathrm{nA}/\mu \mathrm{mLg}=35\mathrm{nm})$ with low overlap capacitance $(0.46\mathrm{fF}/\mu \mathrm{m}$ per device), low gate resistance $(10\Omega)$ at Low Temperature (L T) enables to achieve good RF Figure-Of-Merit (FOM) with Fmax values up to 170GHz. In addition, we demonstrate for the first time the full functionality of Ring Oscillators (RO) and SRAM bitcells processed at 500°C, paving the way for a high-performance 3D sequential CMOS integration.

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首次演示低温$(\leq 500^{\circ}\mathrm{C})$ CMOS器件，具有功能RO和SRAM位单元，面向3D VLSI集成

首次在低于500℃的温度下制备了具有硅单晶通道的FDSOI CMOS晶体管。高性能PMOS $(\mathrm{Ion}=450\mu \mathrm{A}/\mu \mathrm{m}$ (V dd−0.9V) @ $\mathrm{Ioff}=-2\mathrm{nA}/\mu \mathrm{mLg}=35\mathrm{nm})$具有低重叠电容$(0.46\mathrm{fF}/\mu \mathrm{m}$每个器件)，低温(L T)下的低栅极电阻$(10\Omega)$能够实现良好的射频性能图(FOM)， Fmax值高达170GHz。此外，我们首次展示了在500°C下处理的环形振荡器(RO)和SRAM位单元的全部功能，为高性能3D顺序CMOS集成铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 IEEE Symposium on VLSI Technology

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