吸引プラズマエッチング法を用いたSiO 2 ダイアフラム構造作製技術の開発;吸引プラズマエッチング法を用いたSiO 2 ダイアフラム構造作製技術の開発;Development of Simple Fabrication Method of SiO 2 Diaphragm Using Inward Plasma Etching

Ryo Kanou, Hiroshi Suga, Shun'ichiro Shimbori, Satoshi Takahashi, Toshitaka Kubo, Atsushi Ando, Tetsuo Shimizu, Junko Miyawaki
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Abstract

Development of Simple Fabrication Method of SiO2 Diaphragm Using Inward Plasma Etching Ryo KANOU1,3, Hiroshi SUGA1, Shun'ichiro SHIMBORI2, Satoshi TAKAHASHI2, Toshitaka KUBO3, Atsushi ANDO3, Tetsuo SHIMIZU3 and Jun MIYAWAKI3 1Department of Engineering, Chiba Institute of Technology, 2171 Tsudanuma, Narashino-shi, Chiba 2750016, Japan 2Sanyu Co., Ltd., 2434 Ishinazaka-cho, Hitachi-shi, Ibaraki 3191225, Japan 3National Institute of Advanced Industrial Science and Technology, 111 Higashi, Tsukuba-shi, Ibaraki 3058565, Japan
利用吸引等离子体蚀刻法开发SiO二代溢出结构制备技术;利用吸引等离子体蚀刻法开发SiO二代溢出结构制备技术;Development of Simple Fabrication Method of SiO 2 Diaphragm Using Inward Plasma Etching
开发简单的二氧化硅膜的制造方法使用内等离子体蚀刻坂KANOU1,3 Hiroshi日本须贺1,避开'ichiro SHIMBORI2,Satoshi高桥2,Toshitaka katada KUBO3 Atsushi安藤3,Tetsuo清水3和6月MIYAWAKI31部工程,千叶技术研究所、2171 Tsudanuma, Narashino-shi,千叶275年至0016年,日本2常玉原籍有限公司,有限公司,2434 Ishinazaka-cho Hitachi-shi,茨城县319年至1225年,日本3国家先进工业科学技术研究所111东,筑波市,茨城市3058565
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