Deposition of tin disulfide thin films by thermal evaporation and sulphurization

Abstract

Tin disulfide (SnS2) is one of the promising two-dimensional (2D) layered metal dichalcogenide with excellent optical and electrical properties. Due to its excellent electrical performance and low temperature processibility, SnS2 turns out to be a promising channel material for thin film transistors. This work mainly focuses on deposition and characterisation of tin disulfide SnS2 thin films by thermal evaporation of metallic tin followed by sulphurization process. The synthesis incorporated thermal evaporation of precursor tin (Sn) followed by post deposition annealing of tin (Sn) films in the presence of sulphur powder with N2 as the carrier gas. The post sulphur annealing at various temperatures were done to sulphurise the metallic Sn thin films and to improve the phase purity. The high-quality SnS2 films formed by sulphur annealing were analyzed by various techniques. XRD data and Raman spectrum revealed the structural information and vibrational modes of SnS2 films. Optical absorption studies showed a band gap of 2.2 eV, in well agreement with the reported values of SnS2 thin films. The conditions for the sulphur annealing process of thermally evaporated Sn films were optimized and examined the possibility of forming a SnS2 2D material at low temperature with large area uniformity.Tin disulfide (SnS2) is one of the promising two-dimensional (2D) layered metal dichalcogenide with excellent optical and electrical properties. Due to its excellent electrical performance and low temperature processibility, SnS2 turns out to be a promising channel material for thin film transistors. This work mainly focuses on deposition and characterisation of tin disulfide SnS2 thin films by thermal evaporation of metallic tin followed by sulphurization process. The synthesis incorporated thermal evaporation of precursor tin (Sn) followed by post deposition annealing of tin (Sn) films in the presence of sulphur powder with N2 as the carrier gas. The post sulphur annealing at various temperatures were done to sulphurise the metallic Sn thin films and to improve the phase purity. The high-quality SnS2 films formed by sulphur annealing were analyzed by various techniques. XRD data and Raman spectrum revealed the structural information and vibrational modes of SnS2 films. Optical absorption studies showed ...