Fabrication and characterization of a Pi-gate ultrathin body junctionless poly-Si TFTs

Abstract

A novel method of fabricate ultrathin body (UTB) junctionless TFTs (JLTFT) with sub-10nm poly-Si channel has been successfully demonstrated. It is no additional mask for lithography. The cost of fabrication flow can be reduced by a novel method, that demonstrate at this work. UTB JLTFT has low threshold voltage and steep subthreshold slop 160 mV/dec at W/L=0.7um/1um. An ON/OFF current ratio is about 106, and transconductance does not decrease rapidly at a high drain voltage.