Analysis of p/sup +/ poly Si double-gate thin-film SOI MOSFETs

Abstract

The authors have fabricated planar p/sup +/ poly Si double-gate thin-film SOI (silicon-on-insulator) nMOSFETs using wafer bonding. The fabricated devices have shown a transconductance, Gm, exceeding twice that of the single-gate SOI-MOSFET. It was confirmed that conduction in the double-gate SOI MOSFET originates from a fully flat potential and charge injection. An analytical model developed by the authors has displayed electrical characteristics that agree well with those of the fabricated devices.<>