Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

H. Sutanto, Sufwan Durri, S. Wibowo, Hadiyanto Hadiyanto, E. Hidayanto
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引用次数: 9

Abstract

Zinc oxide (ZnO) and aluminum doped zinc oxide (ZnO:Al) thin films have been deposited onto a glass substrate by sol-gel spray coating method at atmospheric pressure. X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis spectrophotometer have been used to characterize the films. XRD spectra indicated that all prepared thin films presented the wurtzite hexagonal structure. SEM images exhibited rootlike morphology on the surface of thin films and the shortest root diameter was about 0.219 μm. The UV-Vis absorption spectra exhibited the absorption edges that were slightly shifted to the lower wavelength. From this result, the incorporation of aluminum into the ZnO involved a slight increase in the optical band-gap of films. The optical bands of films were 3.102 eV, 3.115 eV, 3.118 eV, 3.115 eV, 3.109 eV, and 3.109 eV for ZnO, ZnO:Al 2%, ZnO:Al 4%, ZnO:Al 6%, ZnO:Al 8%, and ZnO:Al 10%, respectively. Increase of Al doping concentration in ZnO films contributed to the increase of their optical band-gap which can be explained by the Burstein-Moss effect.
溶胶-凝胶法制备ZnO:Al薄膜在非晶玻璃基板上的根状形貌
在常压下,采用溶胶-凝胶喷涂的方法在玻璃衬底上制备了氧化锌(ZnO)和铝掺杂氧化锌(ZnO:Al)薄膜。用x射线衍射仪(XRD)、扫描电镜(SEM)和紫外可见分光光度计对膜进行了表征。XRD谱图表明,所制备的薄膜均呈纤锌矿六方结构。SEM图像显示薄膜表面呈根状,根的最短直径约为0.219 μm。紫外可见吸收光谱显示出吸收边缘向较低波长轻微偏移。从这个结果可以看出,在ZnO中掺入铝会使薄膜的光学带隙略有增加。ZnO、ZnO:Al为2%、ZnO:Al为4%、ZnO:Al为6%、ZnO:Al为8%和ZnO:Al为10%时,薄膜的光带分别为3.102 eV、3.115 eV、3.118 eV、3.115 eV、3.109 eV和3.109 eV。ZnO薄膜中Al掺杂浓度的增加导致其光学带隙的增大,这可以用Burstein-Moss效应来解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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