High-speed SiGe:C bipolar technology

Abstract

A SiGe:C bipolar technology with a narrow base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 106 GHz at a collector emitter breakdown voltage of 2.3 V, a maximum oscillation frequency of 145 GHz, and 6.5 ps gate delay demonstrate balanced transistor performance. State-of-the-art results for high-speed digital, analog, and low-power circuits are achieved.