Probing the evolution of electrically active defects in doped ferroelectric HfO2 during wake-up and fatigue

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265098

U. Celano, Y.H. Chen, A. Minj, K. Banerjee, N. Ronchi, S. Mcmitchell, P. Van Marcke, P. Favia, T.-L. Wu, B. Kaczer, G. Van den bosch, J. van Houdt, P. van der Heide

引用次数: 2

Abstract

We correlate the concentration and configuration of electrical defects in ferroelectric Si -doped HfO2 (FE- HfO2) with the electrical device performance during wake-up and fatigue regimes. To this end, we combine time-to-breakdown (TDDB), Kelvin probe force microscopy (KPFM), conductive atomic force microcopy (C-AFM) and Scalpel SPM, probing for the first time, the nanoscopic material variations as a function of device's field cycling behavior.

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研究掺杂铁电HfO2在唤醒和疲劳过程中电活性缺陷的演变

我们将铁电Si掺杂HfO2 (FE- HfO2)中电缺陷的浓度和结构与唤醒和疲劳状态下的电气器件性能联系起来。为此，我们将击穿时间(TDDB)、开尔文探针力显微镜(KPFM)、导电原子力显微镜(C-AFM)和手术刀力显微镜(Scalpel SPM)相结合，首次探索了纳米尺度下材料随器件场循环行为的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 IEEE Symposium on VLSI Technology

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