Study of Phase Formation In The Cute-As2te3System

Research & Development in Material Science Pub Date : 2020-12-14 DOI:10.31031/RDMS.2020.14.000844

Aliyev, Ismailova Sh, Kuluzade Es, Gashimov Km

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Abstract

It is known that compounds and solid solutions based on arsenic chalcogenides occupy an important place among the materials used in optoelectronics [1-3]. Copper chalcogenides and alloys based on them as thermionic and superionic materials are widely used in radio and electronic engineering [4,5]. Some quasi-binary sections with the participation of arsenic chalcogenides and the Cu-As-Se (Te) ternary system have been investigated in the literature [6,7]. However, there is no data in the literature on interactions in the CuTe-As2Te3 system. The aim of this work is to synthesize and study the interaction in the CuTe-As2Te3 system, as well as to search for new semiconducting phases and solid solutions. The CuTe compound melts incongruently at 367 °C and crystallizes in a rhombic syngony with unit cell parameters: a= 3.16; b= 4.07; c= 6.92 Å, sp. gr. Pmmm-D2h [8]. According to [9], the CuTe compound melts incongruently at 400 °C. The As2Te3 compound melts with an open maximum at 381 °C and crystallizes in monoclinic syngony with lattice parameters: a= 14.339; b= 4.006; c= 9.873Å, β= 95°, sp.gr. C2/m, the density is ρ= 6.25g/cm3 [10]. Experimental Part

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cute - as2te3体系相形成的研究

众所周知，砷硫族化合物和固溶体在光电子材料中占有重要地位[1-3]。硫族铜及其合金作为热离子和超离子材料广泛应用于无线电和电子工程[4,5]。文献中已经研究了砷硫族化合物和Cu-As-Se (Te)三元体系参与的准二元截面[6,7]。然而，文献中没有关于CuTe-As2Te3系统相互作用的数据。本工作的目的是综合和研究CuTe-As2Te3体系中的相互作用，以及寻找新的半导体相和固溶体。该化合物在367℃时不均匀熔化，呈菱形共晶，晶胞参数为a= 3.16;b = 4.07;c= 6.92 Å， sp. gr. pmm - d2h[8]。由[9]可知，CuTe化合物在400℃时不均匀熔化。As2Te3化合物在381℃熔体最大开度，结晶为单斜共晶，晶格参数a= 14.339;b = 4.006;C = 9.873Å， β= 95°，sp.gr。C2/m，密度ρ= 6.25g/cm3[10]。实验部分

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Research & Development in Material Science

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