Waveguide-coupled deterministic quantum light sources and post-growth engineering methods for integrated quantum photonics

Chip Pub Date : 2022-09-01 DOI:10.1016/j.chip.2022.100018
Xu-Dong Wang , Yi-Fan Zhu , Ting-Ting Jin , Wei-Wen Ou , Xin Ou , Jia-Xiang Zhang
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引用次数: 1

Abstract

Integrated photonic quantum circuits (IPQCs) have attracted increasing attention in recent years due to their widespread applications in quantum information science. While the most envisioned quantum technologies such as quantum communications, quantum computer and quantum simulations have placed a strict constraint on the scalability of chip-integrated quantum light sources. By introducing size-confined nanostructures or crystal imperfections, low-dimensional semiconductors have been broadly explored as chip-scale deterministic single-photon sources (SPSs). Thus far a variety of chip-integrated deterministic SPSs have been investigated across both monolithic and hybrid photonic platforms, including molecules, quantum dots, color centers and two-dimensional materials. With the rapid development of the chip-scale generation of single photons with deterministic quantum emitters, the field of IPQCs has raised new challenges and opportunities. In this paper, we highlight recent progress in the development of waveguide-coupled deterministic SPSs towards scalable IPQCs, and review the post-growth tuning techniques that are specifically developed to engineer the optical properties of these WG-coupled SPSs. Future prospects on stringent requirement for the quantum engineering toolbox in the burgeoning field of integrated photonics are also discussed.

波导耦合确定性量子光源与集成量子光子学的后生长工程方法
近年来,集成光子量子电路由于在量子信息科学中的广泛应用而受到越来越多的关注。虽然量子通信、量子计算机和量子模拟等最具前瞻性的量子技术对芯片集成量子光源的可扩展性施加了严格的限制。通过引入尺寸受限的纳米结构或晶体缺陷,低维半导体作为芯片级确定性单光子源(SPSs)已被广泛探索。到目前为止,已经在单片和混合光子平台上研究了各种芯片集成的确定性量子力学,包括分子、量子点、色心和二维材料。随着具有确定性量子发射体的单光子芯片的快速发展,ipqc领域提出了新的挑战和机遇。在本文中,我们重点介绍了面向可扩展ipqc的波导耦合确定性SPSs的最新进展,并回顾了专门开发用于设计这些wg耦合SPSs光学特性的生长后调谐技术。并对集成光子学领域对量子工程工具箱的严格要求进行了展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
2.80
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