Effect of Package Pick and Place Process to Induce Chip Crack in Package by Different Stress Modes

Jong-gi Lee, Bo-Sung Kim, Taekyun Kang, Kang-Young Cho
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引用次数: 1

Abstract

Due to strong demand for thin profile package in smart phone with higher memory density (more dies in the package), each component in memory package, such as substrate thickness, solder ball height, EMC thickness and gap between top chip and EMC top surface has been reduced to meet required total package thickness. The mechanical point of view, Si chip has the highest modulus and more prone to defect by external stress. In this paper, possible stress modes to create chip crack during pick and place process during SMT and the best combination of pick and place process for thin multi-chip package were investigated and provided meaningful process parameters for available pick and place models
不同应力模式下封装取放工艺对封装芯片裂纹的影响
由于智能手机对薄型材封装的需求强劲,内存密度更高(封装中有更多的芯片),因此内存封装中的每个组件,如衬底厚度、焊球高度、EMC厚度以及顶部芯片与EMC顶面之间的间隙都被减小,以满足所需的总封装厚度。从力学角度看,硅片的模量最高,更容易受到外力的影响而产生缺陷。本文研究了SMT工艺中产生晶片裂纹的可能应力模式,以及多晶片薄封装的最佳晶片工艺组合,为现有的晶片工艺模型提供了有意义的工艺参数
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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