High-frequency measurements of TSV failures

Abstract

Due to a lot of thermal and mechanical loads during TSV process or post TSV process such as metallization and die stacking, disconnection failure can occur which results in 3D IC yield loss. Thus, a non-destructive diagnostic method by using one point probing for TSV failures is proposed to detect and differentiate TSV failure types and locations. With the fabricated test vehicles with disconnection failures, high-frequency measurements are conducted to verify the proposed diagnostic method, and full and partial disconnection failure is analyzed based on the high-frequency measurement results.