Preparation of Cu(In1−xAlx)Se2 thin films by sol-gel method

Lingjun Kong, Guilin Chen, C. Yuan, G. Jiang, Changfei Zhu, Weifeng Liu
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引用次数: 0

Abstract

Polycrystalline Cu(In1-xAlx)Se2 (CIAS) thin films with chalcopyrite structure were synthesized by sol-gel spin-coating method using nitrates as precursor for low-cost photovoltaic applications. Sequential reduction and selenization treatments were performed with hydrogen and Se vapor, respectively. X-ray diffraction (XRD), SEM, EDS and UV-visible spectrophotometer analysis have been employed to examine the structural properties, surface morphology, atomic concentrations and band gaps of polycrystalline CIAS thin films. The experimental results demonstrated that the Cu(In1-xAlx)Se2 had good crystallinity, uniformity and stoichiometric composition. Simultaneously, we discussed the phenomenon and mechanism of the two-layered structure formation of the synthesized Cu(In1-xAlx)Se2 thin film.
溶胶-凝胶法制备Cu(In1−xAlx)Se2薄膜
以硝酸盐为前驱体,采用溶胶-凝胶旋涂法制备了具有黄铜矿结构的多晶Cu(In1-xAlx)Se2 (CIAS)薄膜,用于低成本光伏应用。分别用氢气和硒蒸气进行顺序还原和硒化处理。采用x射线衍射(XRD)、扫描电镜(SEM)、能谱分析(EDS)和紫外可见分光光度计分析了多晶CIAS薄膜的结构性能、表面形貌、原子浓度和带隙。实验结果表明,Cu(In1-xAlx)Se2具有良好的结晶度、均匀性和化学计量组成。同时,讨论了Cu(In1-xAlx)Se2薄膜双层结构形成的现象和机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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