A study of subband structure and transport of two-dimensional holes in strained-Si p-MOSFETs using full-band modeling

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175941

H. Nakatsuji, Y. Kamakura, K. Taniguchi

引用次数: 13

Abstract

The quantum confinement of the two-dimensional (2D) hole gas in the inversion layer of strained-Si p-MOSFETs is investigated theoretically. The hole mobility enhancement was found to originate from the suppressed inter-band scattering due to subband splitting and the reduced effective mass in the lowest subband with strain.

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用全带模型研究应变si - p- mosfet中二维空穴的子带结构和输运

从理论上研究了应变si - p- mosfet反转层中二维空穴气体的量子约束。空穴迁移率的增强是由于子带分裂抑制了带间散射和最低子带有效质量随应变的降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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