A Thin Adhesive for 3D/2.5D Si Chip Stacking at Low Temperature

Abstract

The bonding property of a thin adhesive for the high density 3D/2.5D Si chip integration with the Cu-Cu bonding at the low temperature range (150–400 °C) was investigated. The cured thin adhesive is bondable to SiO2 after baking at 150 °C with the high surface energy (6.4 J/m2). By using this adhesive Si chip can be integrated in 3D/2.5D with no thermal sliding and no adhesive protrusion from the chip corner. The reliability test results are also investigated.