Pressure and Thickness Dependence of Physical Properties of ZnO:Ga Thin Films by Radio Frequency Magnetron Sputtering

IF 3.1 4区 医学 Q2 BIOPHYSICS
Fang-Hsing Wang, Hua-Tz Tzeng
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引用次数: 0

Abstract

Indium-free transparent conducting oxide films have attracted extensive attention in the field of optoelectronics. Ga-doped ZnO (GZO) thin films are deposited by radio frequency magnetron sputtering on glass substrates at a temperature of 200 °C with ZnO:Ga2O3 (3 wt%). The structural, electrical, and optical properties of the GZO thin films were investigated in terms of deposition pressure and film thickness variations. X-ray diffraction analysis showed that all the prepared GZO films exhibited hexagonal wurtzite crystal structure with a (002) preferential orientation along the c-axis, regardless of pressure and thickness. The average visible transmittance (including the glass substrate) in a wavelength range of 400–700 nm decreased with increasing thickness but varied less with pressure. The highest average visible transmittance reached 88.4% at the thickness of 150 nm and the pressure of 5 mTorr. The optical band gap of the GZO films calculated using Tauc’s method was in the range of about 3.6–3.9 eV. The resistivity of GZO thin films decreased with decreasing deposition pressure and increasing film thickness, and the minimum resistivity obtained at 5 mTorr and 1000 nm was 3.36 × 10-4 Ω-cm. The maximum figure of merit (FOM) of 3.09 × 10-2 Ω-1 was achieved at 5 mTorr and 1000 nm. The superior optical and electrical properties and high FOM show that the prepared GZO thin films are suitable for transparent conducting films and optoelectronic devices.
射频磁控溅射制备ZnO:Ga薄膜物理特性的压力和厚度依赖性
无铟透明导电氧化膜在光电子学领域引起了广泛的关注。采用射频磁控溅射技术,在温度为200℃的玻璃衬底上以ZnO:Ga2O3 (3wt %)沉积了ga掺杂ZnO (GZO)薄膜。从沉积压力和薄膜厚度变化的角度研究了GZO薄膜的结构、电学和光学性能。x射线衍射分析表明,制备的GZO薄膜在c轴方向上具有(002)优先取向的六方纤锌矿晶体结构,与压力和厚度无关。在400 ~ 700 nm波长范围内,平均可见光透过率(包括玻璃基板)随厚度的增加而下降,但随压力的变化较小。在厚度为150 nm、压力为5 mTorr时,平均可见光透过率最高,达到88.4%。用Tauc方法计算得到的GZO薄膜的光学带隙在3.6 ~ 3.9 eV之间。GZO薄膜的电阻率随沉积压力的减小和膜厚的增加而减小,在5 mTorr和1000 nm处获得的最小电阻率为3.36 × 10-4 Ω-cm。在5 mTorr和1000 nm下,FOM最大值为3.09 × 10-2 Ω-1。优异的光学和电学性能和高的FOM表明制备的GZO薄膜适用于透明导电薄膜和光电子器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Applied Biomaterials & Functional Materials
Journal of Applied Biomaterials & Functional Materials BIOPHYSICS-ENGINEERING, BIOMEDICAL
CiteScore
4.40
自引率
4.00%
发文量
36
审稿时长
>12 weeks
期刊介绍: The Journal of Applied Biomaterials & Functional Materials (JABFM) is an open access, peer-reviewed, international journal considering the publication of original contributions, reviews and editorials dealing with clinical and laboratory investigations in the fast growing field of biomaterial sciences and functional materials. The areas covered by the journal will include: • Biomaterials / Materials for biomedical applications • Functional materials • Hybrid and composite materials • Soft materials • Hydrogels • Nanomaterials • Gene delivery • Nonodevices • Metamaterials • Active coatings • Surface functionalization • Tissue engineering • Cell delivery/cell encapsulation systems • 3D printing materials • Material characterization • Biomechanics
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