The Investigation of Lattice Properties for Group-IV Sigesn Ternary Alloy: By Using Machine Learning Method

IF 0.4 Q4 NANOSCIENCE & NANOTECHNOLOGY
Li Zhang, Shengying Sun, Wenqi Huang, Zhenji Chen, Hao Wang, Chunguang Zhang
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引用次数: 0

Abstract

Group-IV SiGeSn ternary alloy is a hot spot in the field of fabricating high-efficient Si-based light source due to its large lattice constant and bandgap variation range. However, due to the high cost and low speed of experimental and computational research, it is difficult to obtain their lattice constants comprehensively and quickly. Machine learning prediction based on statistics is an advanced method to solve this problem. In this paper, based on the existing data of group IV alloys, three machine learning methods such as Random Forest (RF), Support Vector Regression (SVR) and Gradient Boosting Decision Tree (GBDT) have been built to predict the lattice constants of SiGeSn. Firstly, the lattice constants of Group-IV alloys are collected to construct data set; Then, the data set are used to train the machine learning models which describe the quantitative relationship between concentrations and lattice constants; Finally, the prediction performance of these models are compared with each other, and the concentrations with appropriate lattice constants are predicted. The results show the comprehensive performance of SVR model is better than the other two, which means the SVR model can be used to directly predict the lattice constants of SiGeSn.
用机器学习方法研究iv族符号三元合金的晶格性质
Group-IV型SiGeSn三元合金具有较大的晶格常数和带隙变化范围,是制备高效硅基光源领域的研究热点。然而,由于实验和计算研究成本高、速度慢,难以全面、快速地获得它们的晶格常数。基于统计的机器学习预测是解决这一问题的一种先进方法。本文基于已有IV族合金的数据,构建了随机森林(Random Forest, RF)、支持向量回归(Support Vector Regression, SVR)和梯度提升决策树(Gradient Boosting Decision Tree, GBDT)三种机器学习方法来预测SiGeSn的晶格常数。首先,收集iv族合金的晶格常数,构建数据集;然后,使用该数据集训练描述浓度与晶格常数之间定量关系的机器学习模型;最后,对各模型的预测性能进行了比较,并对合适晶格常数的浓度进行了预测。结果表明,SVR模型的综合性能优于其他两种模型,表明SVR模型可以直接预测SiGeSn的晶格常数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Nano Hybrids and Composites
Nano Hybrids and Composites NANOSCIENCE & NANOTECHNOLOGY-
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