Highly reliable 1 Mbit ferroelectric memories with newly developed BLT thin films and steady integration schemes

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979633

B. Yang, Y. Kang, S. Lee, K. Noh, N. Kim, S. Yeom, N. Kang, H. G. Yoon

引用次数: 5

Abstract

Highly reliable packaged 1 Mbit ferroelectric memories with 0.35 /spl mu/m CMOS ensuring ten-year retention and imprint at 175/spl deg/C have been successfully developed for the first time. These excellent reliabilities have resulted from newly developed BLT ferroelectric films with superior performance and steady integration schemes free from attacks of process impurities.

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采用新开发的BLT薄膜和稳定集成方案的高可靠的1mbit铁电存储器

首次成功开发了高可靠性的封装1mbit铁电存储器，该存储器具有0.35 /spl μ l /m CMOS，可确保在175/spl度/C下保持10年的保留和压印。这些优异的可靠性是由于新开发的BLT铁电薄膜具有优越的性能和稳定的集成方案，不受工艺杂质的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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