{"title":"Wafer Level Fine-Pitch Hybrid Bonding: Challenges and Remedies","authors":"V. Chidambaram, Yew Wing Leong, Qin Ren","doi":"10.1109/EPTC50525.2020.9315002","DOIUrl":null,"url":null,"abstract":"Fine-pith hybrid bonding has been demonstrated using 3μm Cu pad size and 6μm pitch. TEOS SiO2 is used as a dielectric material. Oxide films were characterized in terms of porosities. A good correlation has been established between the % of porosity in the oxide film and the bonding energy. Chemical-mechanical polishing (CMP) process control challenges in order to achieve a narrow Cu dishing range has also been discussed. It has been recommended that the post-bond annealing temperature needs to be appropriately adjusted in order to achieve good diffusion bonding at the Cu-Cu interface and at the same time mitigate generation of peeling stresses. Disparity in misalignment is observed within the same bonded wafer. To resolve this, a novel solution of designing mating Cu pads of different dimensions is being proposed. Through this design approach, misalignment could be successfully offset and better Cu pad connectivity could be achieved.","PeriodicalId":6790,"journal":{"name":"2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC)","volume":"22 1","pages":"459-463"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC50525.2020.9315002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Fine-pith hybrid bonding has been demonstrated using 3μm Cu pad size and 6μm pitch. TEOS SiO2 is used as a dielectric material. Oxide films were characterized in terms of porosities. A good correlation has been established between the % of porosity in the oxide film and the bonding energy. Chemical-mechanical polishing (CMP) process control challenges in order to achieve a narrow Cu dishing range has also been discussed. It has been recommended that the post-bond annealing temperature needs to be appropriately adjusted in order to achieve good diffusion bonding at the Cu-Cu interface and at the same time mitigate generation of peeling stresses. Disparity in misalignment is observed within the same bonded wafer. To resolve this, a novel solution of designing mating Cu pads of different dimensions is being proposed. Through this design approach, misalignment could be successfully offset and better Cu pad connectivity could be achieved.