Microfabrication Of Photonic Crystal Mirrors For Optoelectronic Devices.

IF 1 Q4 QUANTUM SCIENCE & TECHNOLOGY
A. Scherer, J. O'Brien, Chuan-cheng Cheng, O. Painter, R. Lee
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引用次数: 1

Abstract

Photonic bandgap crystals are expected to be useful in defining microcavities for modifying spontaneous emission and as high reflectivity mirrors. Here, we use these photonic crystals as end-mirrors of edge-emitting GRINSCH lasers. These single quantum well lasers were grown by molecular beam epitaxy (MBE) and consist of waveguide structures which are in excess of 1.5 micrometers in thickness. To define a high-reflectivity photonic crystal mirror on the edge of these laser stripes, we use a surface mask of PMMA on top of an epitaxially deposited AIAs masking layer. After electron beam exposure of the resist and definition of the 100nm diameter holes through the GaAs cap layer and the 200 nm thick AIAs mask layer, high temperature field oxidation of the AIAs is performed at 340°C for 1.5 hours. This oxidizes the AIAs and forms a very robust etch mask. The hexagonal arrays of 100nm holes are then transferred to a depth of 2 microns through the laser waveguide structure so as to overlap with the optical field in the laser (Figure 1). The output mirror for the laser stripe consists of a standard cleaved facet.
光电器件用光子晶体镜的微加工。
光子带隙晶体有望用于定义微腔,用于修饰自发发射和作为高反射率反射镜。在这里,我们使用这些光子晶体作为边缘发射GRINSCH激光器的端镜。这些单量子阱激光器采用分子束外延(MBE)技术生长,由厚度超过1.5微米的波导结构组成。为了在这些激光条纹的边缘定义一个高反射率的光子晶体反射镜,我们在外延沉积的AIAs掩蔽层上使用了PMMA的表面掩膜。电子束照射抗蚀剂并通过GaAs帽层和200 nm厚的AIAs掩膜层定义直径为100nm的空穴后,在340℃下对AIAs进行高温场氧化1.5小时。这会氧化AIAs并形成非常坚固的蚀刻掩膜。然后,通过激光波导结构将100nm孔的六边形阵列转移到2微米的深度,从而与激光器中的光场重叠(图1)。激光条纹的输出反射镜由一个标准的切割面组成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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