GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells

Abstract

GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are reported with an interest in improving efficiency by evaluation of the III-V device passivation layers and pathways to their optimization. Solar cells with varying window thicknesses are reported for both structures and assist in directing focus of future research. The GaAsP/SiGe on Si tandem solar cell demonstrates a result towards AM1.5G 20.8% AR-corrected efficiency.