Material properties of Cd1−xMgxO transparent conductors

Guibin Chen, K. Yu, L. Reichertz, W. Walukiewicz
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Abstract

We have studied structural, electrical and optical properties of ternary Cd1-xMgxO alloy thin films synthesized by radio frequency magnetron sputtering method with Mg content as high as x=0.44. We found that only a fraction (50-60%) of Mg is incorporated as substitutional Mg contributing to the modification of the electronic structure of the alloy. The electrical and optical results of the Cd1-xMgxO alloys are analyzed in terms of a large upward shift of the conduction band edge with increasing Mg content. The rapid increase of the optical band gap offers a potential of using Cd-rich CdMgO alloys as transparent conductors for photovoltaics.
Cd1−xMgxO透明导体的材料性质
本文研究了用射频磁控溅射法制备的三维Cd1-xMgxO合金薄膜的结构、电学和光学性能,其Mg含量高达x=0.44。我们发现,只有一小部分(50-60%)的Mg作为替代Mg加入,有助于合金电子结构的改变。对Cd1-xMgxO合金的电学和光学结果进行了分析,发现随着Mg含量的增加,导带边缘有较大的上移。光学带隙的快速增加为利用富镉CdMgO合金作为光电透明导体提供了潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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