Nanovoid Formation at Cu/Cu/Cu Interconnections of Blind Microvias: A Field Study

Abstract

A key factor for a high electrical reliability of multilayer High Density Interconnection Printed Circuit Boards (HDI PCBs) is the thermomechanical stability of stacked microvia interconnections. With decreasing via sizes and higher numbers of interconnected layers, the structural integrity of these interconnections becomes a critical factor and is a topic of high interest in current research. The formation of nanovoids and inhibited Cu recrystallization across the interfaces are the two main indications of a weak link from the target pad to the filled via. Based on TEM/EDX measurements on a statistically relevant number of stacked and blind microvias produced in the industrial field, different types of nanovoid phenomena are revealed at the Cu/Cu/Cu junction. The types of nanovoids were categorized relating to the time of appearance (before or after thermal treatment), the affected interfaces or layers and the impact on the Cu recrystallization. The main root causes for each void type are identified and the expected impact on the thermomechanical stability of the via junction is discussed.