A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 /spl mu/m2 6-T SRAM cell

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175782

K. Kuhn, M. Agostinelli, S. Ahmed, S. Chambers, S. Cea, S. Christensen, P. Fischer, J. Gong, C. Kardas, T. Letson, L. Henning, A. Murthy, H. Muthali, B. Obradovic, P. Packan, S. Pae, I. Post, S. Putna, K. Raol, A. Roskowski, R. Soman, T. Thomas, P. Vandervoorn, M. Weiss, I. Young

引用次数: 38

Abstract

This paper presents a highly-manufacturable process technology featuring SiGe HBT devices fully integrated into a 90 nm leading-edge high performance CMOS technology. The technology was developed on a 300 mm wafer platform, and supports process elements including RF CMOS devices, a MIM capacitor, precision resistors, high-Q inductors and varactors.

查看原文本刊更多论文

90nm通信技术，采用SiGe HBT晶体管、RF CMOS、精密R-L-C RF元件和1 /spl mu/m2 6-T SRAM单元

本文介绍了一种高度可制造的工艺技术，该技术将SiGe HBT器件完全集成到90nm领先的高性能CMOS技术中。该技术是在300mm晶圆平台上开发的，支持RF CMOS器件、MIM电容器、精密电阻、高q电感器和变容管等工艺元件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊