Electrically injected photonic bandgap microcavity light sources

Abstract

The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW /spl lambda/-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region.