Effect of High Temperature Annealing on the Physicochemical Properties of systems based on FeSi-=SUB=-x-=/SUB=-

Abstract

It has been established that the physicochemical properties of structures based on iron silicides formed by ion implantation of iron ions into silicon depend significantly on the time of subsequent high-temperature annealing. Objects with different geometric parameters are formed on the surface and the roughness increases. Annealing at 1000oC in an Ar atmosphere is accompanied by a decrease in the content of the Fe-Si chemical bonds during the first 60 seconds. The reason for the drop in thermal conductivity with increasing annealing temperature is the formation of silicide complexes. Keywords: iron silicide, thermoelectric, ion implantation, chemical composition, X-ray photoelectron spectroscopy.