An in-depth study on the fabrication of 1055–1064 nm multi-quantum-well and super-lattice laser diodes

Abstract

The InGaAs/GaAs multi-quantum-well as well as the AlGaAs/GaAs and the GaAsP/GaAs super-lattice laser diodes were successfully fabricated by low-pressure MOCVD system, and a number of novel structures were explored in this systematic investigation. The strain-relief effect and the composition of cladding layers were analyzed in detail. Via a series of growth experiments, we concluded that better lasing efficiency and the minimum threshold current could be obtained from the sample made up of the AlGaAs/GaAs structure combined with the 60% Aluminum content of the AlGaAs cladding layer.