Effects of composition deviation of CuAl2 on BTS and TDDB reliability

Abstract

In this paper, we report the property and reliability of CuAl2 and its effects of compositional shift within ±5%. Resistivity was found to be 7–8 μΩ· cm after annealing at 400 °C, even with compositional shift. Capacitance–Voltage (C–V) after Bias Thermal Stress (BTS) test showed no shift of flat–band voltage under the condition of 3.0 MV/cm × 30 min at 250 °C. Time–Dependent–Dielectric–Breakdown (TDDB) evaluation showed that the reliability is better than that of conventional Cu/TaN interconnects.