Structure and properties of rapid thermal annealed (RTA) BaTiO/sub 3/ thin films on silicon

Abstract

BaTiO/sub 3/ thin films were rf-sputtered on Si(100) and platinized Si(100) substrates under controlled substrate temperature and ambient. Dense, single phase films with strongly preferred orientation in the film thickness range of 0.7 /spl mu/m, and uniform grain sizes up to 0.25 /spl mu/m were obtained under rapid thermal annealing (RTA) heat treatment in a refractory infrared furnace. Electrical measurements including dielectric, pyroelectric and photoelectric response characteristics were carried out. Flat capacitance response (/spl epsi//sub r/=60) and low loss factor (D/spl ap/1-2%) was obtained over a wide frequency range of 100-100 kHz for an optimal specimen. Pyroelectric coefficients determined for the films were in the range of 10/sup -9/ C/cm/sup 2/ K, but significantly strong photovoltages of >900 V/cm, on a 0.6 cm/sup 2/ surface area, were generated with incandescent illumination.