Room-Temperature Bonding with Pd Coated Cu Wire on Al Pads: Ball Bond Optimization with 2-Stage Methodology

Nicholas Kam, M. Hook, Celal Con, K. Karim, M. Mayer
{"title":"Room-Temperature Bonding with Pd Coated Cu Wire on Al Pads: Ball Bond Optimization with 2-Stage Methodology","authors":"Nicholas Kam, M. Hook, Celal Con, K. Karim, M. Mayer","doi":"10.1109/ECTC.2019.00-14","DOIUrl":null,"url":null,"abstract":"Wirebonding performed at elevated temperatures is the standard interconnect process for integrated circuits, typically with the use of low-cost copper bonding wire. However, for specific applications it is necessary for wire bonds to be reliably joined at room-temperature. This paper details the development of a room-temperature ball bonding process using a 2-stage optimization method. The first stage optimizes ball geometry by applying a 32 design of experiment to bonding parameters impact force (IF) and electric flame-off (EFO) current. In the second stage bond shear strength is optimized by stepwise increase in ultrasonic amplitude. Target ball bond values were attained at optimized parameters: IF of 1331 mN, EFO current of 59.9 mA, and an ultrasonic amplitude of 26.46 US%. Pad lift during bonding was observed at excessive ultrasonic amplitudes above 40 US%, as determined by optical images at the bond interface. Bonding parameters at room-temperature (23°C) were increased when compared to a high temperature process (175°C) to account for reduced thermal energy. For the same geometry at room-temperature a 7 % increase to impact force was required. EFO current levels remained relatively constant between the two bonding temperatures. For the same shear strength at room-temperature a 18 % increase in ultrasound amplitude was required. The confirmed average shear strength achieved via the room-temperature process was 116 MPa. Higher values are possible.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"4 1","pages":"2219-2224"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2019.00-14","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Wirebonding performed at elevated temperatures is the standard interconnect process for integrated circuits, typically with the use of low-cost copper bonding wire. However, for specific applications it is necessary for wire bonds to be reliably joined at room-temperature. This paper details the development of a room-temperature ball bonding process using a 2-stage optimization method. The first stage optimizes ball geometry by applying a 32 design of experiment to bonding parameters impact force (IF) and electric flame-off (EFO) current. In the second stage bond shear strength is optimized by stepwise increase in ultrasonic amplitude. Target ball bond values were attained at optimized parameters: IF of 1331 mN, EFO current of 59.9 mA, and an ultrasonic amplitude of 26.46 US%. Pad lift during bonding was observed at excessive ultrasonic amplitudes above 40 US%, as determined by optical images at the bond interface. Bonding parameters at room-temperature (23°C) were increased when compared to a high temperature process (175°C) to account for reduced thermal energy. For the same geometry at room-temperature a 7 % increase to impact force was required. EFO current levels remained relatively constant between the two bonding temperatures. For the same shear strength at room-temperature a 18 % increase in ultrasound amplitude was required. The confirmed average shear strength achieved via the room-temperature process was 116 MPa. Higher values are possible.
Al衬垫上Pd涂层铜线的室温键合:用两阶段方法优化球键合
在高温下进行的线键合是集成电路的标准互连工艺,通常使用低成本的铜键合线。然而,对于特定的应用,有必要在室温下可靠地连接导线键。本文详细介绍了一种采用两阶段优化方法的室温球键合工艺的开发。第一阶段通过对键合参数(冲击力(IF)和电燃断(EFO)电流)进行32次实验设计,优化了球的几何形状。在第二阶段,通过逐步提高超声振幅来优化粘结强度。优化参数为:IF为1331 mN, EFO电流为59.9 mA,超声振幅为26.46 US%。根据键合界面的光学图像,在超过40 US%的超声波振幅下,可以观察到键合过程中的垫升。与高温工艺(175°C)相比,室温(23°C)下的键合参数增加,以减少热能。对于相同的几何形状,在室温下需要增加7%的冲击力。EFO电流水平在两个键合温度之间保持相对恒定。在室温下,相同的抗剪强度需要增加18%的超声振幅。通过室温处理获得的确定平均抗剪强度为116 MPa。更高的值是可能的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信