Effect of the RF Power of PECVD on the Crystalline Fractions of Microcrystalline Silicon (μc-Si:H) Films and Their Structural, Optical, and Electronic Properties

M. Moreno, Arturo Torres-Sánchez, P. Rosales, A. Morales, A. Torres, Javier Flores, Luis Hernández, C. Zuniga, Carlos Ascencio, Alba Arenas
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Abstract

In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH4), hydrogen (H2), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly, we studied the effect of RF power on the crystalline fraction (XC) of the deposited films, and we have correlated the XC with their optical, electrical, and structural characteristics. Different types of characterization were performed in the µc-Si:H film series. We used several techniques, such as Raman scattering spectroscopy, Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM), among others. Our results show that RF power had a strong effect on the XC of the films, and there is an optimal value for producing films with the largest XC.
PECVD射频功率对微晶硅(μc-Si:H)薄膜晶体组分及其结构、光学和电子性能的影响
在这项工作中,我们报道了使用等离子体增强化学气相沉积(PECVD)技术在200°C下由硅烷(SiH4)、氢(H2)和氩(Ar)混合物制备微晶硅(µC - si:H)薄膜的沉积。特别地,我们研究了射频功率对沉积薄膜晶体分数(XC)的影响,并将XC与薄膜的光学、电学和结构特征联系起来。在µc-Si:H薄膜系列中进行了不同类型的表征。我们使用了几种技术,如拉曼散射光谱、傅里叶变换红外光谱(FTIR)、原子力显微镜(AFM)、场发射扫描电子显微镜(FE-SEM)和透射电子显微镜(TEM)等。结果表明,射频功率对薄膜的XC有较大的影响,且存在一个最佳的XC值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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